METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.

主权项

1. A method for manufacturing a semiconductor substrate into which an impurity diffusion ingredient is diffused, the method comprising:
forming a coating film having a thickness of not more than 30 nm by coating a diffusion agent composition onto a semiconductor substrate; and diffusing the impurity diffusion ingredient contained in the diffusion agent composition into the semiconductor substrate, wherein the diffusion agent composition comprises the impurity diffusion ingredient and a silicon compound, wherein the silicon compound can be hydrolyzed to produce a silanol group.