| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing negative electric charge induced at a gate electrode.SOLUTION: A semiconductor device according to an embodiment comprises a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, and a gate electrode. The third semiconductor region is provided on the second semiconductor region. The gate electrode is provided in the second semiconductor region, the third semiconductor region, and the fourth semiconductor region, via a first insulating film. In the second semiconductor region, a first region and a second region are provided. The first region is adjacent to the third semiconductor region and the first insulating film. The second region is adjacent to the first region and the third semiconductor region. The second region is apart from the first insulating film more than the first region. The concentration of impurities of the first conductivity type in the second region is lower than that in the first region.SELECTED DRAWING: Figure 1 |
