| 发明名称 |
SEMICONDUCTOR DEVICES WITH SIDEWALL SPACERS OF EQUAL THICKNESS |
| 摘要 |
Semiconductor structures with different devices each having spacers of equal thickness and methods of manufacture are disclosed. The method includes forming a first gate stack and a second gate stack. The method further includes forming sidewall spacers of equal thickness for both the first gate stack and the second gate stack by depositing a liner material over spacer material on sidewalls of the first gate stack and the second gate stack and within a space formed between the spacer material and source and drain regions of the first gate stack. |
| 申请公布号 |
US2016099245(A1) |
申请公布日期 |
2016.04.07 |
| 申请号 |
US201414504964 |
申请日期 |
2014.10.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG Kangguo;PRANATHARTHIHARAN Balasubramanian;SEO Soon-Cheon |
| 分类号 |
H01L27/092;H01L21/311;H01L21/02;H01L29/08;H01L29/417;H01L21/8238;H01L29/66 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming a first gate stack and a second gate stack; and forming sidewall spacers of equal thickness for both the first gate stack and the second gate stack by depositing a liner material over spacer material on sidewalls of the first gate stack and the second gate stack and within a space formed between the spacer material and source and drain regions of the first gate stack. |
| 地址 |
Armonk NY US |
