SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device, and a method of manufacturing the same, includes first and second gate structures extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, a dummy gate structure provided between the first and second gate structures, a first source/drain region between the first gate structure and the dummy gate structure, a second source/drain region between the second gate structure and the dummy gate structure, a connection contact provided on the dummy gate structure, and a common conductive line provided on the connection contact. The dummy gate structure extends in the first direction. The connection contact extends in the second direction to connect the first source/drain region to the second source/drain region. The common conductive line configured to a voltage to the first and second source/drain regions through the connection contact.

主权项

1. A semiconductor device, comprising:
a first gate structure and a second gate structure extending in a first direction and spaced apart from each other in a second direction intersecting the first direction; a dummy gate structure between the first gate structure and the second gate structure, the dummy gate structure extending in the first direction; a first source/drain region between the first gate structure and the dummy gate structure; a second source/drain region between the second gate structure and the dummy gate structure; a connection contact on the dummy gate structure, the connection contact extending in the second direction to connect the first source/drain region to the second source/drain region; and a common conductive line on the connection contact, the common conductive line configured to apply a voltage to the first and second source/drain regions through the connection contact.