发明名称 |
SEMICONDUCTOR PACKAGE AND CIRCUIT SUBSTRATE FOR THE SEMICONDUCTOR PACKAGE |
摘要 |
Provided is a circuit substrate for a semiconductor package used for mounting a plurality of semiconductor devices. The circuit substrate including: a first circuit substrate unit; and a second circuit substrate unit that is formed on the first circuit substrate unit, wherein Young's modulus of a first dielectric material composing the dielectric layer of the first circuit substrate unit is higher than Young's modulus of a second dielectric material composing the dielectric layer of the second circuit substrate unit, and a coefficient of thermal expansion of the first dielectric material composing the dielectric layer of the first circuit substrate unit is smaller than a coefficient of thermal expansion of the second dielectric material composing the dielectric layer of the second circuit substrate unit. |
申请公布号 |
US2016099197(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
US201514874242 |
申请日期 |
2015.10.02 |
申请人 |
HITACHI METALS, LTD. |
发明人 |
UEMATSU Yutaka;NAGATOMO Hiroyuki;MASUKAWA Junichi |
分类号 |
H01L23/498 |
主分类号 |
H01L23/498 |
代理机构 |
|
代理人 |
|
主权项 |
1. A circuit substrate for a semiconductor package used for mounting a plurality of semiconductor devices, the circuit substrate comprising:
a first circuit substrate unit that has a stacked structure of a dielectric layer and a conductor layer; and a second circuit substrate unit that is formed on the first circuit substrate unit and has a stacked structure of a dielectric layer and a conductor layer, wherein Young's modulus of a first dielectric material composing the dielectric layer of the first circuit substrate unit is higher than Young's modulus of a second dielectric material composing the dielectric layer of the second circuit substrate unit, a coefficient of thermal expansion of the first dielectric material composing the dielectric layer of the first circuit substrate unit is smaller than a coefficient of thermal expansion of the second dielectric material composing the dielectric layer of the second circuit substrate unit, the first circuit substrate unit has an area of a circuit formation larger than that of the second circuit substrate unit, a plurality of electrodes used for mounting a semiconductor device are included on a surface of the second circuit substrate unit, and a minimum line width of an electrical line embedded in the second circuit substrate unit is smaller than a minimum line width of an electrical line embedded in the first circuit substrate unit. |
地址 |
Tokyo JP |