METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas.

主权项

1. A method of manufacturing a semiconductor device, comprising forming a film on a substrate accommodated in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate in the process chamber; exhausting the precursor gas from the process chamber; supplying an oxygen-containing gas to the substrate in the process chamber; exhausting the oxygen-containing gas from the process chamber; supplying a hydrogen-containing gas to the substrate in the process chamber; and exhausting the hydrogen-containing gas from the process chamber, wherein at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than an amount of an exhausted gas or an exhaust rate in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than the amount of the exhausted gas or the exhaust rate in the act of exhausting the precursor gas.