| 摘要 |
PROBLEM TO BE SOLVED: To provide solutions to the problems of an electrical contact trouble, keyhole formation, etc. owing to recess formation in a tungsten plug by chemical etching during tungsten polishing with a chemical mechanical polishing composition.SOLUTION: In a method for polishing a tungsten base material, a chemical mechanical polishing composition is used. The chemical mechanical polishing composition comprises: a metal oxide abrasive; an oxidizer; a tungsten removal rate enhancing substance expressed by the formula I; and water. The polishing composition exhibits an enhanced tungsten removal rate and a tungsten removal rate enhancement. The chemical mechanical polishing composition has a pH of 1 to 5, and exhibits a tungsten removal rate ≥2,000Å/min, and a tungsten removal rate enhancement of 10% or more to that when the enhancing substance is not included.SELECTED DRAWING: None |
