EPITAXY BASE, SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHODS THEREOF

摘要

An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.

主权项

1. An epitaxy base, comprising:
a substrate; and a nucleating layer, disposed on the substrate, wherein the nucleating layer is an aluminum nitride layer having a single crystal structure, an electron diffraction pattern of the nucleating layer comprises a plurality of dot patterns, each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1.