LIGHT-EMITTING ELEMENT

摘要

A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1):;3λ4n+0.30×(λ4n)≤T≤3λ4n+0.45×(λ4n)(1);wherein λ is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

主权项

1. A method of manufacturing a light-emitting element, the method comprising steps of;
forming an n-type nitride semiconductor layer on a substrate; forming a light-emitting layer on the n-type nitride semiconductor layer; forming a p-type nitride semiconductor layer on the light-emitting layer; forming a transparent electrode layer on the p-type nitride semiconductor layer by providing a transparent electrode material selectively which is transparent to a light-emitting wavelength of the light-emitting layer; and wherein the step of forming the transparent electrode layer including steps of; forming a first electrode sublayer on the p-type nitride semiconductor layer by a sputtering method under a condition of a first energy; and forming a second electrode sublayer on the first electrode sublayer by a sputtering method under a condition of a second energy larger than the first energy.