发明名称 |
STRUCTURE AND METHOD TO INCREASE CONTACT AREA IN UNMERGED EPI INTEGRATION FOR CMOS FINFETS |
摘要 |
Source/drain contact structures with increased contact areas for a multiple fin-based complementary metal oxide semiconductor field effect transistor (CMOSFET) having unmerged epitaxial source/drain regions and methods for forming such source/drain contact structures are provided by forming wrap-around source/drain contact structures for both n-type FinFETs and p-type FinFETs. Each of first source/drain contact structures for the n-type FinFETs includes at least one first conductive plug encapsulating epitaxial first source/drain regions on one side of a gate structure, while each of second source/drain contact structures for the p-type FinFETs includes at least a contact metal layer portion encapsulating epitaxial second source/drain regions on one side of the gate structure, and a second conductive plug located over a top surface of the contact metal layer portion. |
申请公布号 |
US2016099246(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
US201414505000 |
申请日期 |
2014.10.02 |
申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Cheng Kangguo;Khakifirooz Ali |
分类号 |
H01L27/092;H01L23/532;H01L29/161;H01L23/528;H01L21/8238;H01L21/225 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |