LIGHT-EMITTING DIODE CHIP HAVING CURRENT DIFFUSION LAYER

摘要

PROBLEM TO BE SOLVED: To provide a light-emitting diode chip having a current diffusion layer small in light absorption and unsusceptible to influence from moisture.SOLUTION: A light-emitting diode chip comprises a semiconductor laminate 5. The semiconductor laminate includes: a p-type semiconductor region 2; an n-type semiconductor region 4; and an active layer 3 disposed between the p-type semiconductor region 2 and the n-type semiconductor region 4, and serving to emit electromagnetic radiation. The n-type semiconductor region 4 is located on the side of a radiation outlet region 6 of the light-emitting diode chip, whereas the p-type semiconductor region 2 is located on the side of a carrier 7 of the light-emitting diode chip. The light-emitting diode chip further comprises a current diffusion layer 1 which is disposed between the carrier 7 and the p-type semiconductor region 2 and has a thickness of less than 500 nm. The current diffusion layer has one or more than one p-type-doped AlGaAs layer (0.5