发明名称 |
SEMICONDUCTOR DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE |
摘要 |
To reduce the amplitude voltage of control signals of a MEMS device. A semiconductor device includes a MEMS device, a first transistor, a second transistor whose source or drain is electrically connected to a source or a drain of the first transistor, a third transistor which sets the potential of a gate of the first transistor to a value at which the first transistor is turned on, a fourth transistor which sets the potential of the gate of the first transistor to a value at which the first transistor is turned off, and a fifth transistor which supplies a signal to a gate of the second transistor and a gate of the fourth transistor. |
申请公布号 |
US2016096725(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
US201514872544 |
申请日期 |
2015.10.01 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Umezaki Atsushi |
分类号 |
B81B7/02 |
主分类号 |
B81B7/02 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a first transistor; a second transistor; a third transistor; a fourth transistor; a fifth transistor; and a microelectromechanical systems device, wherein: one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor; one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor and to a gate of the first transistor; the other of the source and the drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor; the other of the source and the drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor; a gate of the fourth transistor is electrically connected to a gate of the second transistor; one of a source and a drain of the fifth transistor is electrically connected to the gate of the second transistor; and the microelectromechanical systems device is electrically connected to the one of the source and the drain of the first transistor. |
地址 |
Atsugi-shi JP |