Deposition apparatus and methods

摘要

A deposition apparatus (20) includes a deposition chamber (22) and a deposition material source (32). An electron beam source (44) is positioned to direct a first electron beam (42) to vaporize a portion of the deposition material. A first electrode (60) is provided for generating a primary plasma (100) from the deposition material source (32). A second electrode (90) is provided for generating a secondary plasma (104) and further accelerating ions from the primary plasma (100). A bias electric potential is applied to the workpiece (26) to draw ions from the secondary plasma to the workpiece (26). A control system (88) is coupled to the electron beam source (44), the bias voltage source (48), and power supplies (62,92) for the first and second electrodes (60,90).