| 摘要 |
A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide. |
