SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND STORAGE MEDIUM

摘要

The characteristic of a layer formed on a substrate is improved. Also, manufacturing throughput is improved. A substrate processing apparatus has a process chamber which accommodates a substrate, a first process gas supplying part which supplies a first process gas to the substrate, a second process gas supplying part which supplies a second process gas to the substrate, a vaporizer residue measuring part which measures the residual quantity of the first gas in a vaporizer installed to the first process gas supplying part, and a control part which changes the number of cycles for supplying the first process gas and the second process gas based on the residual quantity measured by the vaporizer residue measuring part.