发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device including a nonvolatile memory cell and a field effect transistor together is improved in performance. In a method of manufacturing a semiconductor device, a hydrogen-containing insulating film is formed before heat treatment of a semiconductor wafer, the hydrogen-containing insulating film covering a gate electrode and a gate insulating film in a region that will have a memory cell therein, and exposing a region that will have therein a MISFET configuring a peripheral circuit. Consequently, hydrogen in the hydrogen-containing insulating film is diffused into an interface between the gate insulating film and the semiconductor substrate, and thereby a defect at the interface is selectively repaired. |
申请公布号 |
EP3002780(A1) |
申请公布日期 |
2016.04.06 |
申请号 |
EP20150184691 |
申请日期 |
2015.09.10 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
KAWASHIMA, YOSHIYUKI;YOSHIDA, SHOJI |
分类号 |
H01L21/28;H01L21/30;H01L21/336;H01L27/115;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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