| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoresist composition which is excellent in not only basic properties such as sensitivity and resolution, but also in lithographic performance with indexes of MEEF, DOF and the like, and capable of forming a pattern with a suitable cross sectional shape, and a method of forming a negative resist pattern by using the composition.SOLUTION: The method of forming a negative resist pattern includes a step of (1) forming a resist film by using the photoresist composition, a step of (2) exposing the resist film, and a step of (3) developing the exposed resist film by using organic solvent developer. The photoresist composition includes (A) a polymer containing a structural unit (I) represented by the expression (1), and (B) an acid generator. |
