半導体装置の製造方法,申请号JP20120204438-传众专利搜索

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发明名称	半導体装置の製造方法
摘要
申请公布号	JP5899093(B2)	申请公布日期	2016.04.06
申请号	JP20120204438	申请日期	2012.09.18
申请人	三菱電機株式会社	发明人	南條拓真;尾上和之;今井章文;鈴木洋介;吹田宗義;岡崎拓行;柳生栄治
分类号	H01L21/338;H01L21/28;H01L21/3065;H01L29/417;H01L29/778;H01L29/812	主分类号	H01L21/338
代理机构		代理人
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