METHOD OF FABRICATING A MEMORY DEVICE

摘要

The present invention relates to a method for manufacturing a memory device. The method for manufacturing a memory device includes the steps of: alternately stacking multiple insulation films and multiple sacrificial films on a substrate; forming a channel hole exposing a part of the substrate by etching the insulation films and the sacrificial films; forming a channel structure in the channel hole; forming an opening exposing a part of the substrate by etching the insulation films and the sacrificial films; forming multiple lateral openings including first lateral openings and second lateral openings by removing the sacrificial films through the opening; forming gate electrodes so that the first lateral openings are buried; and forming a blocking film so that the second lateral openings are buried.