Disclosed is a magnetic memory device comprising: a first magnetic pattern provided on a substrate in an integrated manner to have a plurality of penetration holes; a plurality of second magnetic patterns spaced apart from each other and arranged on the first magnetic pattern; a tunnel barrier between the first magnetic pattern and the second magnetic patterns; upper electrodes arranged on the second magnetic patterns respectively; and a plurality of plugs respectively and electrically connecting the upper electrodes and the substrate through the penetration holes. The purpose of the present invention is to provide the memory device having high reliability.
