发明名称 |
MEMORY DEVICE, MEMORY CELL AND MEMORY CELL LAYOUT |
摘要 |
A memory device comprises at least one memory cell. The memory cell includes first and second transistors, and first and second capacitors. The first transistor is coupled to a source line. The second transistor is coupled to the first transistor and a bit line. The first capacitor is coupled to a word line and the second transistor. The second capacitor is coupled to the second transistor and an erase gate. |
申请公布号 |
KR20160037785(A) |
申请公布日期 |
2016.04.06 |
申请号 |
KR20150135706 |
申请日期 |
2015.09.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN SHIH HSIEN;KUO LIANG TAI;LU HAU YAN;KO CHUN YAO |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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