| 摘要 |
The present disclosure concerns a method for programming a magnetic device (100) comprising a plurality of MLU cells (1), where each MLU cell (1) includes a storage magnetic layer (23) having a storage magnetization (231) that is pinned at a low threshold temperature (T L ) and freely orientable at a high threshold temperature (T H ); and a programming line (4) physically separated from each of said plurality of MLU cells (1) and configured for passing a programming current pulse (41) for programming any one of said plurality of MLU cells (1); the method comprising: passing the programming current (41) in the field line (4) for heating the magnetic tunnel junction (2) of each of said plurality of MLU cells (1) at the high threshold temperature (T H ) such as to unpin the second magnetization (231); wherein the programming current (41) is further adapted for generating a programming magnetic field (42) adapted for switching the storage magnetization (231) of each of said plurality of MLU cells (1) in a programmed direction. |
