| 发明名称 | Light-emitting element | ||
| 摘要 | A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part. | ||
| 申请公布号 | US9306123(B2) | 申请公布日期 | 2016.04.05 |
| 申请号 | US201514827872 | 申请日期 | 2015.08.17 |
| 申请人 | EPISTAR CORPORATION | 发明人 | Hon Schang-Jing;Chen Chao-Hsing;Ko Tsun-Kai;Shen Chien-Fu;Wang Jia-Kuen;Chen Hung-Che |
| 分类号 | H01L33/00;H01L33/38;H01L33/46;H01L33/44;H01L33/54;H01L33/62 | 主分类号 | H01L33/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A light-emitting element, comprising: a light-emitting semiconductor stack comprising: a first semiconductor layer;a second semiconductor layer on the first semiconductor layer; anda light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part. | ||
| 地址 | Hsinchu TW | ||