Optical wiring substrate, manufacturing method of optical wiring substrate and optical module

摘要

An optical wiring substrate includes an insulation layer including a resin, and a conductor layer formed on the insulation layer and including a metal and an inclined surface inclined relative to an optical axis of an optical fiber. A first wiring pattern and a second wiring pattern are formed in the conductor layer, the first wiring pattern including a first connecting part to which a first electrode of a photoelectric conversion element is connected, and the second wiring pattern including a second connecting part to which a second electrode of the photoelectric conversion element is connected. A distance between the first wiring pattern and the second wiring pattern is narrowest between the first connecting part and the second connecting part. A distance between the first connecting part and the second connecting part is less than a dimension of the conductor layer in a thickness direction thereof.

主权项

1. An optical wiring substrate configured to hold an optical fiber, comprising:
an insulation layer comprising a resin; and a conductor layer formed on the insulation layer and comprising a metal and an inclined surface inclined relative to an optical axis of the optical fiber, wherein a first wiring pattern and a second wiring pattern of the conductor layer contact and extend along a surface of the insulation layer, the first wiring pattern comprising a first connecting part to which a first electrode of a photoelectric conversion element is connected, and the second wiring pattern comprising a second connecting part to which a second electrode of the photoelectric conversion element is connected, wherein a distance between the first wiring pattern and the second wiring pattern contacting and extending along the surface of the insulation layer is narrowest between the first connecting part and the second connecting part, and wherein a distance between the first connecting part and the second connecting part is less than a dimension of the conductor layer in a thickness direction thereof, wherein the photoelectric conversion element is configured to be electrically connected to a semiconductor circuit element, and wherein the distance between the first wiring pattern and the second wiring pattern is not less than the dimension in the thickness direction of the conductor layer except for the distance between the first connecting part and the second connecting part.