发明名称 |
Zinc oxide-based conductive multilayer structure, process for producing the same, and electronic device |
摘要 |
A zinc-oxide-based conductive stacked structure 1 includes a substrate 11 and, formed on at least one surface of the substrate, an undercoat layer 12 and a transparent conductive film 13. The transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×1020 to 9.8×1020 cm−3. The zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward. |
申请公布号 |
US9303308(B2) |
申请公布日期 |
2016.04.05 |
申请号 |
US201113696653 |
申请日期 |
2011.05.11 |
申请人 |
LINTEC CORPORATION;KOCHI UNIVERSITY OF TECHNOLOGY |
发明人 |
Nagamoto Koichi;Kondo Takeshi;Amino Yumiko;Naganawa Satoshi;Yamamoto Tetsuya;Yamada Takahiro |
分类号 |
B32B15/04;C23C14/08;G06F3/041;C08J7/04 |
主分类号 |
B32B15/04 |
代理机构 |
Young & Thompson |
代理人 |
Young & Thompson |
主权项 |
1. A zinc-oxide-based conductive stacked structure comprising a substrate and, formed on at least one surface of the substrate, an undercoat layer and a transparent conductive film, wherein;
the transparent conductive film is formed of a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material and has a carrier density of 2.0×1020 to 9.8×1020 cm−3, and that the zinc-oxide-based conductive stacked structure exhibits a change ratio in sheet resistivity of 50 or less, after bending of the stacked structure around a round bar having a diameter of 15 mm, with the transparent conductive film facing inward, wherein each transparent conductive layer has a thickness of 50 nm or less, and the zinc-oxide-based conductive stacked structure is obtained by forming, on the undercoat layer through ion plating, a plurality of transparent conductive layers formed from a zinc-oxide-based conductive material, to thereby form the transparent conductive film. |
地址 |
Tokyo JP |