发明名称 |
Resist composition and method for producing semiconductor device |
摘要 |
A resist composition includes: a crosslinking material that is crosslinked in the presence of an acid; an acid amplifier; and a solvent. |
申请公布号 |
US9304399(B2) |
申请公布日期 |
2016.04.05 |
申请号 |
US201414279795 |
申请日期 |
2014.05.16 |
申请人 |
SONY CORPORATION |
发明人 |
Matsuzawa Nobuyuki;Mita Isao;Arimitsu Koji |
分类号 |
G03F7/40;G03F7/30;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
Hazuki International, LLC |
代理人 |
Hazuki International, LLC |
主权项 |
1. A method for producing a semiconductor device, comprising:
forming a first resist pattern capable of supplying an acid, with a first resist composition, on a semiconductor substrate; forming a second resist layer by coating a second resist composition containing a crosslinking material that is crosslinked in the presence of an acid, an acid amplifier, an inclusion compound, and a solvent, on the first resist pattern, wherein the inclusion compound includes the acid amplifier; forming a crosslinked portion in the second resist layer by diffusing an acid from the first resist pattern into the second resist layer; and removing a portion of the second resist layer that is not crosslinked. |
地址 |
Tokyo JP |