发明名称 Resist composition and method for producing semiconductor device
摘要 A resist composition includes: a crosslinking material that is crosslinked in the presence of an acid; an acid amplifier; and a solvent.
申请公布号 US9304399(B2) 申请公布日期 2016.04.05
申请号 US201414279795 申请日期 2014.05.16
申请人 SONY CORPORATION 发明人 Matsuzawa Nobuyuki;Mita Isao;Arimitsu Koji
分类号 G03F7/40;G03F7/30;H01L21/027 主分类号 G03F7/40
代理机构 Hazuki International, LLC 代理人 Hazuki International, LLC
主权项 1. A method for producing a semiconductor device, comprising: forming a first resist pattern capable of supplying an acid, with a first resist composition, on a semiconductor substrate; forming a second resist layer by coating a second resist composition containing a crosslinking material that is crosslinked in the presence of an acid, an acid amplifier, an inclusion compound, and a solvent, on the first resist pattern, wherein the inclusion compound includes the acid amplifier; forming a crosslinked portion in the second resist layer by diffusing an acid from the first resist pattern into the second resist layer; and removing a portion of the second resist layer that is not crosslinked.
地址 Tokyo JP