Ion sensitive field effect transistor

摘要

A CMOS or bipolar based Ion Sensitive Field Effect Transistor (ISFET) comprising an ion sensitive recess for holding a liquid wherein the recess is formed at least partly on top of a gate of the transistor. There is also provided a method of manufacturing an I on Sensitive Field Effect Transistor (ISFET) utilizing CMOS processing steps, the method comprising forming an ion sensitive recess for holding a liquid at least partly on top of a gate of the transistor.

主权项

1. A CMOS or bipolar based Ion Sensitive Field Effect Transistor (ISFET) comprising:
an ion sensitive recess for holding a liquid wherein the recess is formed at least partly on top of a gate of the transistor, a dielectric material over a semiconductor substrate comprising a drain and a source wherein the dielectric material is in contact with, or surrounds, the recess, and wherein the dielectric material further includes an inter-layer dielectric on top of the substrate, the inter-layer dielectric at least partially covering the gate.