| 发明名称 | Tunable radio frequency (RF) front-end architecture using filter having adjustable inductance and capacitance | ||
| 摘要 | A device includes an adjustable capacitance and a switchable inductance coupled to the adjustable capacitance and configured as a tunable resonant circuit, the switchable inductance comprising a tapped structure having a first inductance and a second inductance. | ||
| 申请公布号 | US9306603(B2) | 申请公布日期 | 2016.04.05 |
| 申请号 | US201414297954 | 申请日期 | 2014.06.06 |
| 申请人 | Qualcomm Incorporated | 发明人 | Lee Hong-Ming;Wang Kevin Hsi-huai;Khatri Himanshu;Li Meng |
| 分类号 | H04B1/00;H04B1/10;H03H7/01 | 主分类号 | H04B1/00 |
| 代理机构 | Smith Risley Tempel Santos LLC | 代理人 | Smith Risley Tempel Santos LLC |
| 主权项 | 1. A device, comprising: an adjustable capacitance; a switchable inductance coupled to the adjustable capacitance and configured as a tunable resonant filter circuit, the switchable inductance comprising a tapped structure having a first inductance and a second inductance; a low noise amplifier coupled to an output of the tunable resonant filter circuit, the low noise amplifier configured to generate a first amplified frequency selective signal; and a second tunable filter coupled to an output of the low noise amplifier, the second tunable filter configured to provide a second frequency selective signal. | ||
| 地址 | San Diego CA US | ||