Controlling on-die termination in a nonvolatile memory

摘要

A memory controller transmits a plurality of control values to a non-volatile memory device together with one or more programming commands. The plurality of control values include (i) a first control value that specifies a first termination resistance to be applied to an I/O node of the non-volatile memory device during an interval in which a first data signal transmitted on a bidirectional signaling line coupled to the I/O node is to be received within the non-volatile memory device and (ii) a second control value that specifies a second termination resistance to be applied to the I/O node during an interval in which a second data signal is transmitted on the bidirectional signaling line by another non-volatile memory device.

主权项

1. A method of controlling a non-volatile memory device, the method comprising:
transmitting one or more commands to a first non-volatile memory device that instruct the first non-volatile memory device to store a plurality of control values within one or more programmable registers of the first non-volatile memory device; transmitting the plurality of control values to the first non-volatile memory device, including transmitting (i) a first control value that specifies a first termination resistance to be applied to an input/output (I/O) node of the first non-volatile memory device during an interval in which a first data signal transmitted on a bidirectional signaling line coupled to the I/O node is to be received within the first non-volatile memory device via the I/O node, and (ii) a second control value that specifies a second termination resistance to be applied to the I/O node during an interval in which a second data signal is transmitted on the bidirectional signaling line by a second non-volatile memory device.