ASK modulation amplification circuit

摘要

An amplitude shift keying (ASK) modulation amplifier circuit includes a first amplifier to which a high frequency signal and a modulating signal are supplied, and that is configured to perform an amplification of the high frequency signal and an ASK modulation, and a second amplifier to which an output of the first amplifier and the modulating signal are supplied, and that is configured to perform an amplification of the output signal from the first amplifier and an ASK modulation. In some configurations, an amplification gain of the second amplifier is set higher than an amplification gain of the first amplifier.

主权项

1. An amplitude shift keying (ASK) modulation amplifier circuit, comprising:
a first amplifier to which a high frequency signal and a modulating signal are supplied, and that is configured to perform an amplification of the high frequency signal and an ASK modulation; a second amplifier to which an output of the first amplifier and the modulating signal are supplied, and that is configured to perform an amplification of the output signal from the first amplifier and an ASK modulation; a first control block that supplies the modulating signal together with a first bias current to the first amplifier; and a second control block that supplies the modulating signal together with a second bias current to the second amplifier, wherein the first amplifier comprises:
first and second MOS transistors having source electrodes and gate electrodes, the source electrodes being commonly connected, and a high frequency signal being supplied to the gate electrodes,a first load circuit that is connected to the first and second MOS transistors, anda third MOS transistor having a source electrode, a gate electrode, and a drain electrode, the gate electrode being connected to the gate electrodes of the first and second MOS transistors, the source electrode being connected to the source electrodes of the first and second MOS transistors, and an output of the first control block being supplied to the drain electrode of the third MOS transistor, and wherein an amplification gain of the second amplifier is set higher than an amplification gain of the first amplifier.