| 发明名称 |
Electronic device including memory cells having variable resistance characteristics |
| 摘要 |
An electronic device includes a semiconductor memory. The semiconductor memory includes a stack structure including a first electrode, a second electrode, a third electrode, an insulating layer interposed between the first electrode and the second electrode, and a variable resistance layer interposed between the second electrode and the third electrode; and a selection element layer disposed over at least a part of a sidewall of the stack structure. |
| 申请公布号 |
US9305976(B2) |
申请公布日期 |
2016.04.05 |
| 申请号 |
US201414540710 |
申请日期 |
2014.11.13 |
| 申请人 |
SK HYNIX INC. |
发明人 |
Cho Kwang-Hee |
| 分类号 |
H01L45/00;H01L27/24;G11C13/00;G06F12/08;G06F13/16 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a semiconductor memory unit, the semiconductor memory unit comprising:
a stack structure including a first electrode, a second electrode, a third electrode, an insulating layer interposed between the first electrode and the second electrode, and a variable resistance layer interposed between the second electrode and the third electrode; and a selection element layer disposed over at least a part of a sidewall of the stack structure so that the selection element layer selectively couples the first electrode and the second electrode. |
| 地址 |
Icheon KR |
