发明名称 Device and method for improving AMOLED driving
摘要 Devices and methods for increasing the aperture ratio and providing more precise gray level control to pixels in an active matrix organic light emitting diode (AMOLED) display are provided. By way of example, one embodiment includes disposing a gate insulator and an interlayer dielectric material between a gate electrode of a thin-film transistor of a driving circuit and a channel of the thin-film transistor. The improved structure of the driving circuit facilitates a higher voltage range for controlling the gray level of the pixels, and may increase the aperture ratio of the pixels.
申请公布号 US9305941(B2) 申请公布日期 2016.04.05
申请号 US201213667942 申请日期 2012.11.02
申请人 APPLE INC. 发明人 Chang Shih Chang;Chen Yu Cheng
分类号 G09G3/30;H01L27/12 主分类号 G09G3/30
代理机构 Fletcher Yoder PC 代理人 Fletcher Yoder PC
主权项 1. A display for an electronic device comprising: an array of pixels, each pixel comprising: a portion of a first thin-film transistor (TFT) disposed over a substrate, wherein the portion of the first TFT comprises a first source, a first drain, and a first channel disposed adjacent to the first source and the first drain; a portion of a second TFT disposed over the substrate, wherein the portion of the second TFT comprises a second source, a second drain, and a second channel disposed adjacent to the second source and the second drain; a first via directly and electrically coupled to the first drain of the first TFT; a first insulator layer disposed over the portion of the first TFT and the portion of the second TFT; a first gate of the first TFT disposed over the first insulator layer; a second insulator layer disposed over the first insulator layer and the first gate of the first TFT; a contact disposed over the second insulator layer and directly and electrically coupled to the via; and a second gate of a second TFT disposed over the second insulator layer and directly and electrically coupled to the contact; wherein the deposition of the second gate of the TFT over the second insulator layer reduces a capacitance between the second gate and the second channel; wherein an accuracy of a gray level control of the pixel is increased due to the reduced capacitance; and wherein the deposition of the contact and the second gate of the TFT over the second insulator layer reduces a width of the electrical coupling between the contact and the second gate, thereby allowing an increased pixel aperture ratio.
地址 Cupertino CA US