Semiconductor devices and structures

摘要

An Integrated Circuit device including: a first layer including first transistors; a first metal layer overlaying the first transistors and providing at least one connection to the first transistors; a second metal layer overlaying the first metal layer; and a second layer including second transistors overlaying the second metal layer, where the second metal layer is connected to provide power to at least one of the second transistors and a connection path between the second transistors and the second metal layer, where the connection path includes at least one through-layer via, and where the through-layer via has a diameter less than 150 nm.

主权项

1. An Integrated Circuit device, comprising:
a first layer comprising first transistors; a first metal layer overlaying said first transistors and providing at least one connection to said first transistors; a second metal layer overlaying said first metal layer; and a second layer comprising second transistors overlaying said second metal layer,
wherein said second metal layer is connected to provide power to at least one of said second transistors; and a connection path between said second transistors and said second metal layer,
wherein said connection path comprises at least one through-layer via, andwherein said through-layer via has a diameter less than 150 nm.