Operation method for memory device

摘要

Operation methods for a memory device is provided. An operation method for the memory device comprises programming the memory device as described in follows. Data are provided. The data comprise a plurality of codes. Each number of the codes is counted. Then, a mapping rule is generated according to each number of the codes. In the mapping rule, each of the codes is mapped to one of a plurality of verifying voltage levels which are sequentially arranged from low to high. After that, the data are programmed into the memory device according to the mapping rule.

主权项

1. An operation method for a memory device, comprising:
programming the memory device, comprising: providing a plurality of data to a controller, the data comprising a plurality of codes; counting each number of the codes by the controller; generating a mapping rule according to each number of the codes, wherein in the mapping rule, each of the codes is mapped to one of a plurality of verifying voltage levels which are sequentially arranged from low to high; and programming the data into a memory array of the memory device according to the mapping rule.