发明名称 |
Bismuth-substituted rare-earth iron garnet crystal film and optical isolator |
摘要 |
A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89≦x≦1.43 and 0.85≦y≦1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 μm. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing. |
申请公布号 |
US9303333(B2) |
申请公布日期 |
2016.04.05 |
申请号 |
US201113884363 |
申请日期 |
2011.11.10 |
申请人 |
SUMITOMO METAL MINING CO., LTD. |
发明人 |
Oosumi Shuuji;Nomi Yasutaka;Nakamura Nobuo;Hatanaka Hiroshi;Kajigaya Tomio |
分类号 |
C30B29/34;G02B1/02;C30B19/12;C30B29/28;G02F1/09;G02F1/00 |
主分类号 |
C30B29/34 |
代理机构 |
Kratz, Quintos & Hanson, LLP |
代理人 |
Kratz, Quintos & Hanson, LLP |
主权项 |
1. A bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein
the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y in the chemical formula satisfy 0.89≦x≦1.43 and 0.85≦y≦1.10. |
地址 |
Tokyo JP |