| 发明名称 |
Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
| 摘要 |
The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer. |
| 申请公布号 |
US9303187(B2) |
申请公布日期 |
2016.04.05 |
| 申请号 |
US201313947449 |
申请日期 |
2013.07.22 |
| 申请人 |
Cabot Microelectronics Corporation |
发明人 |
Dinega Dimitry;Moeggenborg Kevin;Ward William;Mateja Daniel |
| 分类号 |
H01L21/304;C09G1/02;H01L21/306;C09G1/00;C09G1/04;C09K13/06;C09K3/14;B24B1/00;H01L21/3105;H01L21/321 |
主分类号 |
H01L21/304 |
| 代理机构 |
|
代理人 |
Omholt Thomas;Hornilla Arlene |
| 主权项 |
1. A chemical mechanical polishing (CMP) method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon; the method comprising abrading a surface of the substrate with a CMP composition to remove at least a portion of the substrate to polish the substrate; the CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to about 9.5, and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkyl ammonium polymer; and wherein ceria abrasive is present in the CMP composition at a concentration of about 0.1 to about 2 percent by weight (wt %), and the cationic polymer is present in the CMP composition at a concentration of about 20 to about 200 parts-per-million (ppm) by weight, wherein the aqueous carrier further comprises ammonium nitrate. |
| 地址 |
Aurora IL US |
