| 摘要 |
Provided is a method for manufacturing a semiconductor device. The method comprises the following steps of: forming memory cells which share a data storage layer; performing a strong program operation on first memory cells arranged in a checker board pattern, among the memory cells; performing a heat treatment process after performing the strong program operation; performing a strong program operation on second memory cells arranged in a reverse checker board pattern, among the memory cells, and performing a slight program operation on the first memory cells; and performing a heat treatment process after performing the strong program operation and the slight program operation. Therefore, the method improves retention characteristics. |
