Semiconductor structure having aluminum oxynitride film on germanium layer and method of fabricating the same

摘要

A semiconductor structure includes: a germanium layer 30; and an aluminum oxynitride film 32 that is formed on the germanium layer, wherein: an EOT of the aluminum oxynitride film is 2 nm or less; Cit/Cacc is 0.4 or less; on a presumption that Au acting as a metal film is formed on the aluminum oxynitride film, the Cit is a capacitance value between the germanium layer and the metal film at a frequency of 1 MHz in a case where a voltage of the metal film with respect to the germanium layer is applied to an inversion region side by 0.5 V; and the Cacc is a capacitance value between the germanium layer and the metal film in an accumulation region.

主权项

1. A semiconductor structure comprising:
a germanium layer; and an aluminum oxynitride film that is formed on the germanium layer, wherein an EOT of the aluminum oxynitride film is 2 nm or less, wherein at an interface between the germanium layer and the aluminum oxynitride film: Cit/Cacc is 0.4 or less; wherein if a metal film comprising gold is formed on the aluminum oxynitride film, the Cit is a capacitance value between the germanium layer and the metal film at a frequency of 1 MHz in a case where a voltage of the metal film with respect to the germanium layer is applied to an inversion region side by 0.5 V and the Cacc is a capacitance value between the germanium layer and the metal film in an accumulation region; the Cit/Cacc is less than 0.05×T when an initial thickness (nm) of the aluminum oxynitride film before the thermal process is the T.