3 dimensional semiconductor device having a lateral channel

摘要

A 3D semiconductor device and a method of manufacturing the same are provided. The method includes forming a first semiconductor layer including a common source node on a semiconductor substrate, forming a transistor region on the first semiconductor layer, wherein the transistor region includes a horizontal channel region substantially parallel to a surface of the semiconductor substrate, and source and drain regions branched from the horizontal channel region to a direction substantially perpendicular to the surface of the semiconductor substrate, processing the first semiconductor layer to locate the common source node corresponding to the source region, forming a gate in a space between the source region and the drain region, forming heating electrodes on the source region and the drain region, and forming resistance variable material layers on the exposed heating electrodes.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a common source node formed on the semiconductor substrate; a transistor region including a horizontal channel region formed on the common source node and substantially parallel to a surface of the semiconductor substrate, and source and drain regions branched from the horizontal channel region to a direction substantially perpendicular to the surface of the semiconductor substrate; a gate formed in a space between the source region and the drain region; heating electrodes formed on the source region and the drain region; and resistance variable material layers formed on the heating electrodes, wherein a resistance variable material layer on the drain region is electrically coupled to a heating electrode thereunder, and a resistance variable material layer on the source region is electrically disconnected to a heating electrode thereunder.