发明名称 |
Semiconductor devices including cell-type power decoupling capacitors |
摘要 |
A semiconductor device includes an internal circuit and a cell-type power decoupling capacitor. The cell-type power decoupling capacitor is formed on a semiconductor substrate using a stack cell capacitor process. The cell-type power decoupling capacitor stabilizes a supply voltage to provide the stabilized supply voltage to the internal circuit. Accordingly, the semiconductor device including the cell-type power decoupling capacitor may be insensitive to power noise and may occupy a small area on a chip. |
申请公布号 |
US9305919(B2) |
申请公布日期 |
2016.04.05 |
申请号 |
US201313792867 |
申请日期 |
2013.03.11 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Yoo Han-Sik;Oh Se-Il |
分类号 |
H01L27/13;H01L27/08;H01L27/04;H01L49/02 |
主分类号 |
H01L27/13 |
代理机构 |
Myers Bigel & Sibley, P.A. |
代理人 |
Myers Bigel & Sibley, P.A. |
主权项 |
1. A semiconductor device, comprising:
a substrate; an internal circuit in the substrate; and a cell-type power decoupling capacitor on the internal circuit, the cell-type power decoupling capacitor stabilizing a supply voltage to provide the stabilized supply voltage to the internal circuit; wherein the cell-type power decoupling capacitor comprises: a first conductive layer connected to a first supply voltage; a second conductive layer connected to a second supply voltage that is lower than the first supply voltage, and separated from the first conductive layer; and a dielectric layer disposed between the first conductive layer and the second conductive layer, wherein the cell-type power decoupling capacitor is on a metal-oxide-semiconductor field-effect transistor (MOSFET). |
地址 |
KR |