发明名称 Semiconductor devices including cell-type power decoupling capacitors
摘要 A semiconductor device includes an internal circuit and a cell-type power decoupling capacitor. The cell-type power decoupling capacitor is formed on a semiconductor substrate using a stack cell capacitor process. The cell-type power decoupling capacitor stabilizes a supply voltage to provide the stabilized supply voltage to the internal circuit. Accordingly, the semiconductor device including the cell-type power decoupling capacitor may be insensitive to power noise and may occupy a small area on a chip.
申请公布号 US9305919(B2) 申请公布日期 2016.04.05
申请号 US201313792867 申请日期 2013.03.11
申请人 Samsung Electronics Co., Ltd. 发明人 Yoo Han-Sik;Oh Se-Il
分类号 H01L27/13;H01L27/08;H01L27/04;H01L49/02 主分类号 H01L27/13
代理机构 Myers Bigel & Sibley, P.A. 代理人 Myers Bigel & Sibley, P.A.
主权项 1. A semiconductor device, comprising: a substrate; an internal circuit in the substrate; and a cell-type power decoupling capacitor on the internal circuit, the cell-type power decoupling capacitor stabilizing a supply voltage to provide the stabilized supply voltage to the internal circuit; wherein the cell-type power decoupling capacitor comprises: a first conductive layer connected to a first supply voltage; a second conductive layer connected to a second supply voltage that is lower than the first supply voltage, and separated from the first conductive layer; and a dielectric layer disposed between the first conductive layer and the second conductive layer, wherein the cell-type power decoupling capacitor is on a metal-oxide-semiconductor field-effect transistor (MOSFET).
地址 KR
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