| 发明名称 | Method of manufacturing semiconductor device capable of enhancing bonding strength between connection terminal and electrode | ||
| 摘要 | A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time. | ||
| 申请公布号 | US9305875(B2) | 申请公布日期 | 2016.04.05 |
| 申请号 | US201314063866 | 申请日期 | 2013.10.25 |
| 申请人 | FUJITSU LIMITED | 发明人 | Shimizu Kozo;Sakuyama Seiki;Miyajima Toyoo |
| 分类号 | H01L23/498;H01L21/768;H01L23/00;H05K3/34;B23K35/24;H05K3/24 | 主分类号 | H01L23/498 |
| 代理机构 | Fujitsu Patent Center | 代理人 | Fujitsu Patent Center |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element; providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc; and connecting the first electrode and the second electrode by bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a solidus temperature of the solder for a certain period of time, wherein the constant temperature is a temperature at which solid-phase solder and liquid-phase solder coexist in the connection terminal. | ||
| 地址 | Kawasaki JP | ||