Post-passivation interconnect structure AMD method of forming same

摘要

A semiconductor device including a dielectric layer formed on the surface of a post-passivation interconnect (PPI) structures. A polymer layer is formed on the dielectric layer and patterned with an opening to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is then removed to expose a portion of the PPI structure. A solder bump is then formed over and electrically connected to the first portion of the PPI structure.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a passivation layer overlying the semiconductor substrate; an interconnect layer overlying the passivation layer; a dielectric layer formed overlying the interconnect layer without covering a first portion of the interconnect layer, wherein the dielectric layer comprises nitride, wherein the dielectric layer extends into a recess in the interconnect layer; a protective layer formed overlying the dielectric layer without covering the first portion of the interconnect layer, wherein the protective layer extends into a recess in the dielectric layer; and a bump formed overlying and electrically connected to the first portion of the interconnect layer.