| 发明名称 |
Semiconductor device comprising an active layer and a Schottky contact |
| 摘要 |
A semiconductor device comprising at least one active layer on a substrate and a a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer. |
| 申请公布号 |
US9305789(B2) |
申请公布日期 |
2016.04.05 |
| 申请号 |
US201514693118 |
申请日期 |
2015.04.22 |
| 申请人 |
NXP B.V. |
发明人 |
Donkers Johannes Josephus Theodorus Marinus;Heil Stephan Bastiaan Simon;aan de Stegge Jos |
| 分类号 |
H01L29/00;H01L21/285;H01L21/283;H01L29/47;H01L29/20 |
主分类号 |
H01L29/00 |
| 代理机构 |
|
代理人 |
Madnawat Rajeev |
| 主权项 |
1. A semiconductor device comprising at least one active layer on a substrate and a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer;
in which the body of the Schottky contact comprises a first TiW sub-layer nearest to the at least one active layer, a second TiW sub-layer farthest from the at least one active layer, and a TiW(N) sub-layer in-between the first and second TiW sub-layers. |
| 地址 |
Eindhoven NL |
