Method of matching two or more plasma reactors

摘要

Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset Δα in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset Δα.

主权项

1. A method of matching two plasma reactors, comprising:
for each one of said two plasma reactors:
(a) introducing a workpiece into a chamber of the plasma reactor, performing an etch process on the workpiece and measuring etch rate distribution on the workpiece at an initial value of a tilt angle between a workpiece plane and a source power applicator about a tilt axis,(b) obtaining successive etch rate distributions relative to a workpiece plane at successive tilt angles α between the workpiece plane and said source power applicator, and determining successive variances σ of said successive etch rate distributions,(c) generating a non-uniformity function σ(α) from said successive variances σ and from corresponding ones of said successive tilt angles α; determining an offset in tilt angle α between the non-uniformity functions σ(α) of said two plasma reactors; and changing the tilt angle α in one of said two plasma reactors by an amount corresponding to said offset in tilt angle.