Single photomask high precision thin film resistor

摘要

An integrated circuit contains a thin film resistor in which a body of the thin film resistor is disposed over a lower dielectric layer in a system of interconnects in the integrated circuit. Heads of the thin film resistor are disposed over electrodes which are interconnect elements in the lower dielectric layer, which provide electrical connections to a bottom surface of the thin film resistor. Top surfaces of the electrodes are substantially coplanar with a top surface of the lower dielectric layer. A top surface of the thin film resistor is free of electrical connections. An upper dielectric layer is disposed over the thin film resistor.

主权项

1. A method of forming an integrated circuit, comprising the steps of:
forming a lower dielectric layer above active components of said integrated circuit; forming electrodes in said lower dielectric layer, such that top surfaces of said electrodes are substantially coplanar with a top surface of said lower dielectric layer between said electrodes; forming a layer of resistor material over said lower dielectric layer and over said electrodes; forming a resistor mask over said layer of resistor material which overlaps said electrodes; removing said layer of resistor material in areas exposed by said resistor mask to form a thin film resistor, said thin film resistor making electrical connections to said top surfaces of said electrodes at a bottom surface of said thin film resistor; and forming an upper dielectric layer over said thin film resistor and said lower dielectric layer, so that a top surface of said thin film resistor is free of electrical connections.