| 发明名称 | Catalyst free synthesis of vertically aligned CNTs on SiNW arrays | ||
| 摘要 | The present invention discloses novel one dimensional, direct nano-heterojunctions of vertically aligned silicon nanowires (SiNW)-carbon nano tube (CNT) arrays with ultra-low turn-on field useful in single electronic devices. The invention further discloses catalyst free chemical vapor deposition (CVD) route for synthesis of one dimensional, direct nano-heterojunctions of vertically aligned SiNW-CNT arrays. | ||
| 申请公布号 | US9305777(B2) | 申请公布日期 | 2016.04.05 |
| 申请号 | US201214008847 | 申请日期 | 2012.03.30 |
| 申请人 | Council of Scientific and Industrial Research | 发明人 | Shelke Manjusha Vilas |
| 分类号 | C23C16/00;H01L21/02;B82Y10/00;C01B31/02;C30B25/00;C30B29/06;C30B29/60;H01L29/06;B82Y30/00;B82Y40/00;H01L51/00;H01L51/05 | 主分类号 | C23C16/00 |
| 代理机构 | Ohlandt Greeley Ruggiero & Perle L.L.P. | 代理人 | Ohlandt Greeley Ruggiero & Perle L.L.P. |
| 主权项 | 1. A catalyst free chemical vapor deposition (CVD) process to obtain one dimensional, direct, nano-heterojunction arrays of silicon nanowire-carbon nanotube (SiNW-CNT) comprising reacting sublimed aromatic hydrocarbons as carbon precursor with vertically aligned SiNW to grow a single vertically aligned CNT at nanoscale nucleation site at the tip of each single vertically aligned SiNW and provide direct contact between each CNT and SiNW. | ||
| 地址 | New Delhi IN | ||