Method for manufacturing a photovoltaic cell with a locally diffused rear side

摘要

A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.

主权项

1. A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of:
(a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a pattern of boron-containing doping paste directly on the silicon dioxide layer on the rear surface, the boron-containing doping paste comprising a boron compound and a solvent, and wherein the silicon dioxide layer covers the whole rear surface of the silicon substrate when the boron-containing doping paste is deposited on the silicon dioxide; (d) depositing a pattern of phosphorus-containing doping paste directly on the silicon dioxide layer on the rear surface, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent, and wherein the silicon dioxide layer covers the whole rear surface of the silicon substrate when the phosphorus-containing doping paste is deposited on the silicon dioxide; (e) heating the silicon substrate in an ambient inside a furnace to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate through the silicon dioxide layer, wherein the silicon substrate is placed inside the furnace vertically parallel to at least one silicon substrate having the same structure.