Defect inspection apparatus, system, and method

摘要

Aspects of the present disclosure describe an inspection apparatus which performs inspection on a smaller field of a wafer with structures for current collection. The defective via holes may be located based on the collected current. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

主权项

1. An apparatus for use in defect inspection, comprising:
a substrate, wherein the substrate is 150 mm or more in size; a dielectric layer provided on top of the substrate; a plurality of current collection structures provided on top of the dielectric layer, wherein the plurality of current collection structures covers a field in a size of a lithography exposure field or smaller, wherein the field is smaller than the size of the substrate, wherein each collection structure in the plurality includes a conductive pad that is smaller than the field and is in a size of about 1 mm×1 mm to about 5 mm×5 mm, wherein the conductive pad is configured to act as a current collector for interrogating an electron beam, wherein each collection structure is electrically connected to a corresponding exposed probe contact on a surface of the substrate, wherein the current collection structures are configured such that when a patterned layer of photoresist is formed on to of the current collection structures, the current collection structures collect current from an electron beam incident on the patterned layer of photoresist, the collected current indicative of the presence or absence of a defect in the patterned layer of photoresist.