| 发明名称 | Thin wafer handling method | ||
| 摘要 | A method includes receiving a carrier with a release layer formed thereon. A first adhesive layer is formed on a wafer. A second adhesive layer is formed over the first adhesive layer or over the release layer. The carrier and the wafer are bonded with the release layer, the first adhesive layer, and the second adhesive layer in between the carrier and the wafer. | ||
| 申请公布号 | US9305769(B2) | 申请公布日期 | 2016.04.05 |
| 申请号 | US201414157210 | 申请日期 | 2014.01.16 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Yu Chen-Hua;Chiou Wen-Chih;Jeng Shin-Puu;Tu Hung-Jung |
| 分类号 | H01L21/30;H01L21/02;H01L21/18;H01L21/683;H01L21/20;H01L21/46 | 主分类号 | H01L21/30 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A method, comprising: forming a first adhesive layer on a wafer; forming a second adhesive layer over the first adhesive layer or over a release layer on a carrier; and bonding the carrier and the wafer with the release layer, the first adhesive layer, and the second adhesive layer in between the carrier and the wafer, wherein the bonding process is subsequent to forming the first adhesive layer on the wafer, and a peripheral portion of the wafer is free of the release layer. | ||
| 地址 | TW | ||