Seal ring structure with a v-shaped dielectric layer conformally overlapping a conductive layer

摘要

A method of forming a seal ring structure includes the following steps. A substrate is provided, and the substrate includes a seal ring region. A metal stack is formed in the seal ring region. A first dielectric layer covering the metal stack is formed. A part of the first dielectric layer is removed to form an opening to expose the metal stack, and at least a side of the opening is not perpendicular to a top surface of the first dielectric layer. A conductive layer is formed to fill the opening. A second dielectric layer is formed to continuously cover the first dielectric layer and the conductive layer, and the second dielectric layer has a v-shaped surface totally overlapping the conductive layer.

主权项

1. A seal ring structure, comprising:
at least a metal stack, a first dielectric layer, a conductive layer and a second dielectric layer sequentially disposed in a seal ring region of a substrate, wherein at least a side between the first dielectric layer and the conductive layer is not perpendicular to a top surface of the first dielectric layer, the second dielectric layer comprises a v-shaped surface, the top surface of the second dielectric layer is exposed, and the second dielectric layer directly contacting and totally overlapping all of the conductive layer.